논문 읽기 02-A: 'New development of Atomic Layer Deposition: Processes, Methods and Applications', Sci. Technol. Adv. Mater., 20, (2019), 66
요즘 ALD 트렌드가 어떤지 공부도 할겸 논문 한 편 구해서 읽는다. 읽으면서 체크했던 내용들 요약하듯 짜깁기해서 정리해본다. 대충 절반으로 쪼개서 앞부분과 뒷부분으로 나눠 올릴 예정이다.
첫 번째 포스팅의 TOC는 다음과 같다.
- New development of Atomic Layer Deposition: Processes, Methods and Applications
New development of Atomic Layer Deposition: Processes, Methods and Applications
- Science and Technology of Advanced Materials, 2019, Vol. 20, NO. 1, 465-496 (Sci. Technol. Adv. Mater., 20, (2019), 66)
- DOI: https://doi.org/10.1080/14686996.2019.1599694
Abstract
1. Introduction
1.1 Definition of ALD
- Chemical precursors are sequentially introduced to the surface of a substrate where they chemically react directly with the surface to form sub-monolayers of film
1.2 Backgroud
- Two of more precursors are pulsed/purged sequentially (self-limiting behaviour)
- Exposure of the first precursor in the reactor chamber to form a layer on the substrate
- Purge the excess first precursor and the by-products
- Exposure of the second precursor
- Purge or evacuation of the excess second precursor and by-products
- The process is repeated until the required film thickness is achieved
Figure.01
Figure.01 Illustration of ALD for ZnO thin film deposition 'Numerical modelling in the atomic layerdeposition process: A short review', unpublished.
Figure.02
Figure.02 A model ALD process for depositing TiO2 on hydroxyl groups functionalized substrate using TiCl4 and H2O as precursors1
1.3 Thin Film Applications
- Semiconductors
- Batteries
- The solar industry
- Membrane technololgy
- Catalyst
- Medicine/Medical devices
- etc.
1.4 Comparison of ALD with other coating techniques
Table.01
Table.01 Different types of film deposition methods (adapted from 2), the sputtering was adapted from 3 while the breath figure method was adapted from 4
Method | Description and types | Advantages | Applications |
---|---|---|---|
Electroplating | Film formation from chemicals in electrolytic solution placed onto substrate surface with a seed layer on top | Corrosion resistance, decoration, mechanical characteristics improvement, protection barriers, electrical conduction and heat resistance | Metal plating, corrosion resistance, decoration, mechanical characteristics improvement, friction reduction, protection barriers, improved electrical conductivity, heat resistance and radiation protection etc. |
Spin coating | Film formation from chemical reaction between liquid-phase sources (often sol-gel) applied onto surface of substrate while spinning | Simplicity and ease of set up, low cost and fast operating system | Photoresists, insulators, organic semiconductors, synthetic metals, nanomaterials, metal and metal oxide precursors, transparent conductive oxides, optical mirrors, magnetic disk for data storage, solar cells etc. |
Sputtering | A process of deposition of materials because of bombardment of targets by high energy particles ejected from a source | Deposit a wide variety of metal and metal oxide nanoparticles (NPs) and nanoclusters (NCs), insulators, alloys and composites, and even organic compounds | Silicon wafer, solar panel or optical device, catalysis |
Breath figure | A self-assembly process that results in a honeycomb-structured films with micro-pores arranged in honeycomb shape usually formed by water microdroplets condensed on a cool surface from warm, humid air like breath | It is simple and applicable to a wide variety of materials with highly organized honeycomb-like porous surface | Optics, photonics, surface science, biotechnology, and regenerative medicine |
Thermal oxidation | Film formation by thermal oxidation of the substrate | Slow oxidation rate, good control of the oxide thickness and high values of breakdown field | Semiconductor industry, transistors, photoresistors, capacitors and field oxides, etc. |
Physical vapour deposition (PVD) | Film formation by condensation of gasified source material, directly transported from source to substrate through the gas phase: Evaporation (thermal, E-beam), Molecular beam epitaxy (MBE), Pulsed laser deposition (PLD), Reactive PVD, Sputtering (DC, DC magnetron, RF) | Atomic level control of chemical composition, film thickness, and transition sharpness | Fuel cells, batteries, microelectronics, optical and conducting surfaces, etc. |
Chemical vapour deposition (CVD) | Film formation by chemical reaction between mixed gaseous source materials on a substrate surface using: Atmospheric-pressure CVD (APCVD), Low-pressure CVD (LPCVD), Plasma-enhanced CVD (PECVD), Metal-organic CVD (MOCVD) | High growth rates, good reproducibility, epitaxial films growth, good film quality, conformal step coverage | Microelectronics, solar cells, fuel cells, batteries, etc. |
Atomic layer deposition (ALD) | A sub-class of CVD with film formation via sequential cycling of self-limiting chemical half-reactions on the substrate surface. Each reaction cycle accounts for the deposition of a (sub) monolayer. The reaction can be activated by thermal energy or plasma enhancement. They can be categorized as: Thermal ALD, Plasma-enhanced ALD (PEALD), Spatial ALD (S-ALD) | High quality films, conformality, uniformity, step coverage | Fuel cells, desalination, microelectronics, capacitors, oxides, catalysts, etc. |
Table.02
Table.02 Comparison of thinfilmdeposition techniques which are similar to ALD 5
Property | Deposition Technique | |||||
---|---|---|---|---|---|---|
CVD | MBE | ALD | PLD | Evaporate | Sputtering | |
Deposition Rate | Good | Fair | Poor | Good | Good | Good |
Film density | Good | Good | Good | Good | Fair | Good |
Lack of pinholes | Good | Good | Good | Fair | Fair | Fair |
Thickness uniformity | Good | Fair | Good | Fair | Fair | Good |
Sharp dopant profiles | Fair | Good | Good | Varies | Good | Poor |
Step coverage | Varies | Poor | Good | Poor | Poor | Poor |
Sharp interfaces | Fair | Good | Good | Varies | Good | Poor |
Low substrate temp. | Varies | Good | Good | Good | Good | Good |
Smooth interfaces | Varies | Good | Good | Varies | Good | Varies |
No plasma damage | Varies | Good | Good | Fair | Good | Poor |
1.5 Advantages and Disadvantages of ALD
Table.03
Table.03 Advantages and disadvantages of ALD
Advantages | Disadvantages |
---|---|
1. High-quality films a. Control of the film thickness b. Escellent repeatablity c. High film density d. Amorphous of crystalline film e. Ultra-thin films 2. Conformality a. Excellent 3D conformality b. Large area thickness uniformity c. Atomically flat and smooth surface coating 3. Challenging Substrates a. Gentle deposition process for sensitive substrates b. Low temperature and stress c. Excellent adhesion d. Coats Teflon 4. Low-temperature processing 5. Soichiometric control 6. Inherent film quality associated with self-limiting 7. Self-assembled nature of the ALD mechanism 8. Multilayer | 1. The time required for the chemical reactions 2. The economic viability 3. Very high material waste rate 4. Very high energy waste rate 5. Intensive nature of the ALD process 6. Nano-Particle emissions |
1.6 Complex 3D nanostructures
- A variety of materials such as semiconductors, magnetic materials, noble metals, and insulators are being fabricated using ALD to form 3D complex nanostructures
- “The precursor flow will be hindered, and hence the reactions can be different from those reactions on a planar surface, in terms of both mechanism of nucleation and growth of the film. … The specific challenges for the characterization of 3D nanoarchitectures were summarized in the 6.”
Table.04
Table.04 Materials, reactants and templates used in ALD coating of nano-porous structures. Republished with permission from 7
Materials | Reactants | Temperature | Template |
---|---|---|---|
TiO2 | Ti[OCH(CH3)2]4/H2O | 140℃ | Polycarbonate |
ZrO2 | Zr[OCH(CH3)3]4 | ||
TiO2 | TiCl4/H2O | 105℃ | AAO |
ZnO | Zn(C2H5)2/H2O | 200℃ | AAO |
ITO | InCp/O3 Tetrakis(dimethylamino)tin/H2O2 | 275℃ | AAO |
Ru | Ru(EtCp)2/O2 | 300℃ | AAO |
SiO2 | H2N(CH2)3Si(OCH2CH3)3/H2O/O3 | 150℃ | AAO |
Fe2O3 | Fe2(OBu)6/H2O | 130℃-170℃ | AAO |
Fe2O3 | Fe(Cp)2/O3 | 230℃ | AAO |
Fe2O3 + Fe3O4 | Fe(Cp)2/O2 | 350℃-500℃ | AAO |
ZnS | Zn(C2H5)2/H2S | 120℃ | AAO |
Sb2O5 | (Sb(NMe2)3)/O3 | 120℃ | AAO |
Sb2S3 | (Sb(NMe2)3)/H2S | 120℃ | AAO |
Nb2O3 | NbI5/O3 | 320℃ | AAO |
- ITO: Indum tin oxide
- AAO: anodic aluminum oxide
- Ru(EtCp)2: bis(ethycyclopentadienyl)ruthenium
- Sb(NMe2)3: Tris(dimethylamido)antimony(III)
2. ALD Processes
Table.05
Table.05 Advantages and disadvantages of PEALD
Advantages | Disadvantages |
---|---|
Low deposition temperature | Limited conformality |
Higher reactivity (shorter deposition times) | More complicated reactor designs |
Higher film purity | More complicated reaction chemistry |
Denser films | Wide range of chemistry possible |
Higher throughput | Potentially poor conformality |
In situ plasma treatment | Lower throughput |
Lower impurity | Damage to films |
Additional growth parameter |
Figure.05
Figure.05 Schematic representation of the three different types of plasma-assisted atomic layer deposition that can be distinguished: (a) direct plasma (b) remote plasma, and (c) radical enhanced
'Recently a branch of ALD, called the photo-assisted ALD or UV-enhanced ALD, has been developed. There the illumination by UV light is adapted as a part of the ALD cycle. UV exposure has been shown to enhance the surface reactions and lead to improved film properties.'
8
References
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